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US 2016/0104531 A1Published application
Writable device based on alternating current
AssigneeHewlett-Packard Development Company, L.P.
InventorRobert J. Brooks
Life of this patent
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Abstract
A nonvolatile memory device is writable to a high resistance state and a low resistance state. The nonvolatile memory device may be heated to at least a threshold temperature, based on application of an alternating current (AC) signal, and may be written based on application of a voltage bias.
Claims15
A system comprising:
- a nonvolatile memory device writable to a high resistance state and a low resistance state;
- and
- a controller to heat the nonvolatile memory device to at least a threshold temperature, based on application of an alternating current (AC) signal, and write to the nonvolatile memory device based on application of a voltage bias.
A system comprising:
- a memory based on a plurality of memristors, wherein a memristor is writable to a high resistance state and a low resistance state;
- a controller to select the memristor to be written, heat the memristor at or above a threshold temperature based on application of an alternating current (AC) signal, and write to the memristor based on application of a voltage bias while the memristor is heated at or above the threshold temperature.
A method, comprising:
- applying an AC signal to a nonvolatile memory device to heat the device to at least a critical ion mobility level;
- and
- writing the nonvolatile memory device to a low resistance state based on inducing ion movement by applying a negative DC signal to the nonvolatile memory device while at or above the critical ion mobility level as a result of heating by the AC signal.
Dependencies are inferred from the claim text.