Memory device and method for thermoelectric heat confinement
AssigneeInternational Business Machines Corporation
InventorsAravinthan Athmanathan, Daniel Krebs
Life of this patent
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Abstract
A memory device for thermoelectric heat confinement and method for producing same. The memory device includes a plurality of phase-change memory cells, wherein each of the phase-change memory cells has a first electrode, a second electrode and a phase-change material. The first electrode and the phase-change material are arranged such that a surface normal of a dominating interface for a current flow between the first electrode and the phase-change material points on one side to the phase-change material of the phase-change memory cell and on an opposite side to a phase-change material of a neighboring phase-change memory cell. A method for producing a memory device for thermoelectric heat confinement is also provided.
Claims18
A memory device for thermoelectric heat confinement, the memory device having a plurality of phase-change memory cells, wherein each of the phase-change memory cells comprises:
- a first electrode;
- a second electrode;
- and
- a phase-change material, wherein the first electrode and the phase-change material are arranged such that a surface normal of an interface for a current flow between the first electrode and the phase-change material points on one side to the phase-change material of the phase-change memory cell and on an opposite side to a phase-change material of a neighboring phase-change memory cell.
The memory device according to 1, wherein the first electrode is a cup-shaped electrode having a top region and aside region, wherein the top region of the cup-shaped electrode interfaces a top region of the phase-change material and the side region of the cup-shaped electrode interfaces a side region of the phase-change material.
A method for producing a memory device for thermoelectric heat confinement, the memory device including a plurality of phase-change memory cells, each having a first electrode, a second electrode and a phase-change material, the method comprising:
- arranging the first electrode and the phase-change material such that a surface normal of an interface for a current flow between the first electrode and the phase-change material points on one side to the phase-change material of the phase-change memory cell and on an opposite side to a phase-change material of a neighboring phase-change memory cell.
Dependencies are inferred from the claim text.