Methods, devices and processes for multi-state phase change devices
AssigneeMicron Technology, Inc.
InventorsDavide Colombo, Davide Erbetta
Life of this patent
Estimating the term…
Abstract
Devices include multiple phase change materials connected in parallel between electrodes. Memory cells with multiple parallel phase change materials can be programmed to transition among more than two states representing multiple bits of information. Methods for manufacture and use are also disclosed
Claims19
A method of operating a phase change device, comprising applying an electrical signal across parallel first and second phase change materials resulting, at least in part, in a change of resistive state of at least one of the first and second phase change materials, wherein a crystalline state resistance of the second phase change material is larger than a crystalline state resistance of the first phase change material to permit differentiation among resistive states.
A method of programming a resistive memory device, comprising:
- providing a resistive memory cell comprising a first resistance change material and a second resistance change material electrically connected in parallel between a common first electrode and a common second electrode;
- and
- switching the resistive memory cell between a first logic state and a second logic state by applying a bias between the common first and second electrodes to cause at least one of the first and second resistance change materials to undergo a change in resistance state.
Dependencies are inferred from the claim text.