Back to results
US 2016/0103395 A1Published application
Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
AssigneeFUJIFILM Corporation
InventorsHideaki TSUBAKI, Shinichi KANNA
Life of this patent
Estimating the term…
Abstract
A pattern forming method, including: (A) coating a substrate with a positive resist composition of which solubility in a positive developer increases and solubility in a negative developer decreases upon irradiation with actinic rays or radiation, so as to form a resist film; (B) exposing the resist film; and (D) developing the resist film with a negative developer; a positive resist composition for multiple development used in the method; a developer for use in the method; and a rinsing solution for negative development used in the method.
Claims8
A pattern forming method, comprising:
- coating a substrate with a resist composition capable of forming a resist film of which solubility in a positive developer which is an alkali developer increases and solubility in a negative developer containing an organic solvent decreases upon irradiation with actinic rays and or radiation, so as to form a resist film;
- and
- developing the resist film exposed with the negative developer containing an organic solvent,
- wherein the organic solvent in the negative developer contains a ketone-based solvent,
- the pattern forming method only includes negative development for developing the resist film exposed, and
- the resist composition contains a resin having an aromatic group.
3 more elements
Dependencies are inferred from the claim text.