Photoresist composition and associated method of forming an electronic device

A photoresist composition comprising:

• a first polymer comprising, based on 100 mole percent of total repeat units, 50 to 100 mole percent of photoacid-generating repeat units;
• wherein each of the photoacid-generating repeat units comprises an anion, a photoacid-generating cation, and base-solubility-enhancing functionality;
• wherein either the anion or the photoacid-generating cation is polymer-bound;
• wherein the base-solubility-enhancing functionality is selected from the group consisting of tertiary carboxylic acid esters, secondary carboxylic acid esters wherein the secondary carbon is substituted with at least one unsubstituted or substituted C6-40 aryl, acetals, ketals, lactones, sultones, alpha-fluorinated esters, beta-fluorinated esters, alpha,beta-fluorinated esters, polyalkyleneglycols, alpha-fluorinated alcohols, and combinations thereof;
• and wherein the photoacid-generating cation has the structure (I)
• wherein
• q is independently in each photoacid-generating repeat unit 0, 1, 2, 3, 4, or 5;
• r is independently at each occurrence in each photoacid-generating repeat unit 0, 1, 2, 3, or 4;
• R1 is independently at each occurrence in each photoacid-generating repeat unit halogen, unsubstituted or substituted C1-40 hydrocarbyl, or unsubstituted or substituted C1-40 hydrocarbylene;
• m is independently in each photoacid-generating repeat unit 0 or 1;
• X is independently in each photoacid-generating repeat unit a single bond, —O—, —S—, —C(═O)—, —C(R2)2—, —C(R2)(OH)—, —C(═O)O—, —C(═O)N(R2)—, —C(═O)C(═O)—, —S(═O)—, or —S(═O)2—, wherein R2 is independently at each occurrence hydrogen or C1-12 hydrocarbyl;
• and
• Z− is free or monovalent monoanion;
• and
• a second polymer that exhibits a change in solubility in an alkali developer under the action of acid.