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US 2016/0103391 A1Published application
Photoresist composition and associated method of forming an electronic device
AssigneeRohm and Haas Electronic Materials LLC
InventorsPaul J. LaBeaume, Vipul Jain, Suzanne M. Coley, James W. Thackeray, James F. Cameron, Amy M. Kwok, David A. Valeri
Life of this patent
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Abstract
A photoresist composition includes a first polymer in which at least half of the repeat units are photoacid-generating repeat units, and a second polymer that exhibits a change in solubility in an alkali developer under the action of acid. In the first polymer, each of the photoacid-generating repeat units comprises photoacid-generating functionality and base-solubility-enhancing functionality.
Claims10
A photoresist composition comprising:
- a first polymer comprising 50 to 100 mole percent of photoacid-generating repeat units, wherein each of the photoacid-generating repeat units comprises (a) photoacid-generating functionality and (b) base-solubility-enhancing functionality selected from the group consisting of tertiary carboxylic acid esters, secondary carboxylic acid esters wherein the secondary carbon is substituted with at least one unsubstituted or substituted C6-40 aryl, acetals, ketals, lactones, sultones, alpha-fluorinated esters, beta-fluorinated esters, alpha,beta-fluorinated esters, polyalkyleneglycols, alpha-fluorinated alcohols, and combinations thereof, and
- a second polymer that exhibits a change in solubility in an alkali developer under the action of acid.
Dependencies are inferred from the claim text.