Method and program product for designing source and mask for lithography

Abstract

A system and method for optimizing (designing) a mask pattern, in which SMO and OPC are collaboratively used to exert a sufficient collaborative effect or are appropriately used in different manners. The method for designing a source and a mask for lithography includes a step (S1) of selecting a set of patterns; a step of performing source mask optimization (SMO) using the set of patterns, under an optical proximity correction (OPC) restriction rule which is used for selectively restricting shifting of an edge position of a polygon when OPC is applied to the set of patterns; and a step (S3, S4) of determining a layout of the mask for lithography, by applying OPC to all patterns constituting the mask for lithography using the source optimized through the SMO.

Dependencies are inferred from the claim text.