Complementary metal oxide semiconductor device with iii-v optical interconnect having iii-v epitaxially formed material

An electrical device comprising:

• a first conductivity semiconductor device positioned on a first portion of a type IV semiconductor substrate;
• an optoelectronic light emission device comprising type III-V semiconductor materials that is in electrical communication with the first semiconductor device, wherein the optoelectronic light emission device is positioned adjacent to the first semiconductor device on the first portion of the type IV semiconductor substrate;
• a dielectric waveguide present on a second portion of the type IV semiconductor substrate;
• an optoelectronic light detection device comprising type III-V semiconductor material present on a third portion of the type IV semiconductor substrate, wherein the dielectric waveguide is positioned between and aligned with the optoelectronic light detection device and optoelectronic light emission device to transmit a light signal from the optoelectronic light emission device to the optoelectronic light detection device;
• and
• a second conductivity semiconductor device positioned on the third portion of the type IV semiconductor substrate, wherein the second conductivity semiconductor device is in electrical communication with the optoelectronic light detection device.

A method of forming an electrical device comprising:

• forming a first semiconductor device on a first portion of an SOI substrate and forming a second semiconductor device on a third portion of the SOI substrate, the SOI substrate including an SOI layer present on a buried dielectric layer, the buried dielectric layer being present on a base semiconductor substrate;
• removing a portion of the SOI layer and the buried dielectric layer of the SOI substrate to expose portions of the base semiconductor substrate adjacent to each of the first semiconductor device and the second semiconductor device, wherein an island of remaining portions of at least the buried dielectric layer is present between the exposed portions of the base semiconductor layer in a second portion of the SOI substrate;
• forming an optoelectronic light emission device comprising type III-V semiconductor materials on the exposed portion of the base semiconductor layer adjacent to the first semiconductor device;
• forming an optoelectronic light detection device comprising type III-V semiconductor material on the exposed portion of the base semiconductor layer adjacent to the second semiconductor device;
• and
• forming a dielectric waveguide on the island in the second portion of the SOI substrate.