Method for producing single crystal, and method for producing silicon wafer

A manufacturing method of a single crystal using a single-crystal pull-up apparatus comprising a chamber, a crucible disposed in the chamber and adapted to receive a dopant-added melt in which red phosphorus is added to a silicon melt, and a pull-up portion that is configured to pull up a seed crystal after the seed crystal is brought into contact with the dopant-added melt, the method comprising:

• adding the red phosphorus to the silicon melt so that a resistivity of the single crystal falls in a range from 0.7 mΩ·cm to 0.9 m∩·cm;
• subjecting an evaluation silicon wafer obtained from the single crystal to a heat treatment in which the evaluation silicon wafer is heated at 1200 degrees C. for 30 seconds in a hydrogen atmosphere;
• and
• pull-up the single crystal while appropriately controlling a period for a temperature of the single crystal to be in a range of 570±70 degrees C. so that the number of pits generated on the evaluation silicon wafer becomes 0.1/cm2 or less.