Vapor phase growth apparatus and vapor phase growth method

A vapor phase growth apparatus comprising:

• a reaction chamber;
• a shower plate provided at an upper part of the reaction chamber and having a first gas ejection hole and a second gas ejection hole formed in a surface thereof close to the reaction chamber;
• a first gas supply path connected to the first gas ejection hole and supplying a first process gas to the reaction chamber;
• a second gas supply path connected to the second gas ejection hole and supplying a second process gas to the reaction chamber;
• a first source gas supply path supplying a first source gas including a group III element to the first gas supply path or the second gas supply path;
• a second source gas supply path supplying a second source gas including a group V element to the first gas supply path or the second gas supply path;
• a first connection path connecting the first source gas supply path and the first gas supply path;
• a second connection path connecting the first source gas supply path and the second gas supply path;
• a third connection path connecting the second source gas supply path and the first gas supply path;
• a fourth connection path connecting the second source gas supply path and the second gas supply path;
• a first control unit controlling the passage and stop of gas through the first connection path;
• a second control unit controlling the passage and stop of gas through the second connection path;
• a third control unit controlling the passage and stop of gas through the third connection path;
• and
• a fourth control unit controlling the passage and stop of gas through the fourth connection path.

A vapor chase growth method comprising:

• loading a substrate to a reaction chamber;
• separately supplying gas including a group III element and gas including a group V element to the reaction chamber before the gases are introduced into the reaction chamber to form a first semiconductor film on the substrate;
• and
• mixing the gas including the group III element and the gas including the group V element before the gases are introduced into the reaction chamber and supplying the mixed gas to the reaction chamber to form a second semiconductor film on the substrate, after forming the first semiconductor film without taking out the substrate from the reaction chamber.