Physical vapor deposition apparatus and method of depositing phase-change materials using the same
AssigneeSamsung Electronics Co., Ltd.
InventorsZhe Wu, Jung-Hwan Park, Jeong-Hee Park, Dong-Ho Ahn
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AssigneeSamsung Electronics Co., Ltd.
InventorsZhe Wu, Jung-Hwan Park, Jeong-Hee Park, Dong-Ho Ahn
Estimating the term…
A physical vapor deposition (PVD) apparatus for forming a phase-changeable layer includes a process chamber including a loading chamber configured to load a substrate, and a depositing chamber configured to deposit ion particles of a phase-changeable material onto the substrate; a target member on an upper portion of the depositing chamber and configured to provide the ion particles of the phase-changeable material which react with process gases in a plasma state; a plasma generator configured to generate a process gas plasma from the process gases; a chuck on a lower portion of the depositing chamber and holding the substrate, the chuck including a heater configured to heat the substrate, and at least one electrode configured to guide the ion particles of the phase-changeable material to the substrate; and a supplementary heater in the process chamber and configured to transfer radiant heat around the substrate.
A physical vapor deposition (PVD) apparatus for forming a phase-changeable layer, the PVD apparatus comprising:
A physical vapor deposition (PVD) apparatus for forming a phase-changeable layer, the PVD apparatus comprising:
Dependencies are inferred from the claim text.