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US 2016/0102013 A1Published application
Low-E Panels and Methods for Forming the Same
AssigneeIntermolecular, Inc.
InventorsGuizhen Zhang, Jeremy Cheng, Guowen Ding, Tong Ju, Minh Huu Le, Daniel Schweigert
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Abstract
Embodiments provided herein describe low-e panels and methods for forming low-e panels. A transparent substrate is provided. A reflective layer is formed above the transparent substrate. A metal oxide layer is formed between the transparent substrate and the reflective layer. A base layer is formed between transparent substrate and the metal oxide layer. The base layer has a first refractive index. A dielectric layer is formed between the base layer and the metal oxide layer. The dielectric layer has a second refractive index.
Claims20
A method for forming a low-e panel, the method comprising:
- providing a transparent substrate;
- forming a first base layer above the transparent substrate, wherein the first base layer comprises zinc and tin;
- forming a first dielectric layer above the first base layer, wherein the first dielectric layer comprises niobium;
- forming a first seed layer above the first dielectric layer, wherein the first seed layer comprises zinc;
- forming a first reflective layer above the first seed layer;
- forming a first barrier layer above the first reflective layer, wherein the first barrier layer comprises nickel, titanium, and niobium;
- forming a second base layer above the first barrier layer, wherein the second base layer comprises zinc and tin;
- forming a second dielectric layer above the second base layer, wherein the second dielectric layer comprises niobium;
- forming a second seed layer above the second dielectric layer, wherein the second seed layer comprises zinc;
- forming a second reflective layer above the second seed layer;
- forming a second barrier layer above the second reflective layer, wherein the second barrier layer comprises nickel, titanium, and niobium;
- forming a first over-coating layer above the second barrier layer, wherein the first over-coating layer comprises zinc and tin;
- forming a second over-coating layer above the first over-coating layer, wherein the second over-coating layer comprises zinc;
- and
- forming a capping layer above the second over-coating layer,
- wherein the first dielectric layer has a refractive index that is higher than a refractive index of the first base layer, and the second dielectric layer has a refractive index that is higher than a refractive index of the second base layer.
13 more elements
A method for forming a low-e panel, the method comprising:
- providing a transparent substrate;
- forming a first base layer above the transparent substrate, wherein the first base layer comprises zinc and tin and has a refractive index of about 2.0;
- forming a first dielectric layer above the first base layer, wherein the first dielectric layer comprises niobium and has a refractive index of between about 2.3 and about 2.5;
- forming a first seed layer above the first dielectric layer, wherein the first seed layer comprises zinc;
- forming a first reflective layer above the first seed layer, wherein the first reflective layer comprises silver;
- forming a first barrier layer above the first reflective layer, wherein the first barrier layer comprises nickel, titanium, and niobium;
- forming a second base layer above the first barrier layer, wherein the second base layer comprises zinc and tin and has a refractive index of about 2.0;
- forming a second dielectric layer above the second base layer, wherein the second dielectric layer comprises niobium and has a refractive index between about 2.3 and about 2.5;
- forming a second seed layer above the second dielectric layer, wherein the second seed layer comprises zinc;
- forming a second reflective layer above the second seed layer, wherein the second reflective layer comprises silver;
- forming a second barrier layer above the second reflective layer, wherein the second barrier layer comprises nickel, titanium, and niobium;
- forming a first over-coating layer above the second barrier layer, wherein the first over-coating layer comprises zinc and tin;
- forming a second over-coating layer above the first over-coating layer, wherein the second over-coating layer comprises zinc;
- and
- forming a capping layer above the second over-coating layer.
12 more elements
A low-e panel comprising:
- a transparent substrate;
- a first base layer formed above the transparent substrate, wherein the first base layer comprises zinc and tin;
- a first dielectric layer formed above the first base layer, wherein the first dielectric layer comprises niobium;
- a first seed layer formed above the first dielectric layer, wherein the first seed layer comprises zinc;
- a first reflective layer formed above the first seed layer;
- a first barrier layer formed above the first reflective layer, wherein the first barrier layer comprises nickel, titanium, and niobium;
- a second base layer formed above the first barrier layer, wherein the second base layer comprises zinc and tin;
- a second dielectric layer formed above the second base layer, wherein the second dielectric layer comprises niobium;
- a second seed layer formed above the second dielectric layer, wherein the second seed layer comprises zinc;
- a second reflective layer formed above the second seed layer;
- a second barrier layer formed above the second reflective layer, wherein the second barrier layer comprises nickel, titanium, and niobium;
- a first over-coating layer formed above the second barrier layer, wherein the first over-coating layer comprises zinc and tin;
- a second over-coating layer formed above the first over-coating layer, wherein the second over-coating layer comprises zinc;
- and
- a capping layer formed above the second over-coating layer,
- wherein the first dielectric layer has a refractive index that is higher than a refractive index of the first base layer, and the second dielectric layer has a refractive index that is higher than a refractive index of the second base layer.
13 more elements
Dependencies are inferred from the claim text.