Method of improving getter efficiency by increasing superficial area
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYuan-Chih Hsieh, Li-Cheng Chu, Hung-Hua Lin, Chih-Jen Chan, Lan-Lin Chao
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYuan-Chih Hsieh, Li-Cheng Chu, Hung-Hua Lin, Chih-Jen Chan, Lan-Lin Chao
Estimating the term…
In some embodiments, the present disclosure relates to a MEMs (micro-electromechanical system) package device having a getter layer. The MEMs package includes a first substrate having a cavity located within an upper surface of the first substrate. The cavity has roughened interior surfaces. A getter layer is arranged onto the roughened interior surfaces of the cavity. A bonding layer is arranged on the upper surface of the first substrate on opposing sides of the cavity, and a second substrate bonded to the first substrate by the bonding layer. The second substrate is arranged over the cavity. The roughened interior surfaces of the cavity enables more effective absorption of residual gases, thereby increasing the efficiency of a gettering process.
A MEMs (microelectromechanical system) package, comprising:
A MEMs (microelectromechanical system) package, comprising:
A semiconductor device, comprising:
Dependencies are inferred from the claim text.