A manufacturing method of a piezoelectric device, which includes a first area in which silicon oxide, a second supporting layer, a first electrode layer, a piezoelectric layer containing lead, and a second electrode layer are sequentially stacked, a second area in which the silicon oxide, the second supporting layer, the piezoelectric layer, and the second electrode layer are sequentially stacked, and a third area in which the silicon oxide and the second electrode layer are sequentially stacked, the method comprising:
- after forming the silicon oxide, the second supporting layer, and the piezoelectric layer, removing the second supporting layer and the piezoelectric layer formed in the third area;
- performing a heat process in a state in which the silicon oxide formed in the third area is separated from the piezoelectric layer;
- diffusing the lead in the piezoelectric layer to the silicon oxide formed in the third area;
- and
- adding the lead to the second electrode layer of the silicon oxide side in the third area as impurities.