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US 2016/0101501 A1Published application
Permeated grooving in cmp polishing pads
AssigneeTexas Instruments Incorporated
InventorsChristopher Lee Schutte, Prakash Lakshmikanthan
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Abstract
A polishing pad for polishing a semiconductor wafer or other materials, having grooves in the polishing pad to enhance the usable lifetime of the polishing pad.
Claims6
A CMP polishing pad, comprising:
- a CMP polishing layer, including a polishing pad configured to polish a surface of at least one of a magnetic, optical or semiconductor substrate in the presence of a polishing medium, the polishing layer including a rotational axis, an outer periphery and an annular polishing track concentric with the rotational axis, wherein the polishing pad has a top surface, a bottom surface and a thickness between the top surface and the bottom surface;
- a plurality of grooves formed in the polishing pad comprising first and second sets of grooves located entirely within the polishing pad;
- the first set of grooves located on the top surface of the polishing pad, has a pattern and all grooves in the top surface vertically penetrate into the top surface of polishing pad to at least 50% of the polishing pad thickness;
- and
- the second set of grooves is located on the bottom surface of the polishing pad and all grooves of the bottom surface vertically penetrate into the bottom surface of polishing pad to at least 50% of the polishing pad thickness;
- and wherein the first set of grooves is located between and interlaced at the interior ends with the second set of grooves, without any intersections between the first and second set of grooves, and are configured to present a continuous groove to the material being polished from the top of the pad to within 6 percent of the bottom of the polishing pad.
3 more elements
A polishing pad, comprising:
- a polishing layer configured to polish a surface of at least one of a magnetic, optical or semiconductor substrate in the presence of a polishing medium, the polishing layer including:
- a rotational axis;
- an outer periphery;
- an annular polishing track concentric with the rotational axis;
- and
- peripheral region located between the annular polishing track and the outer periphery;
- and
- a plurality of grooves formed in the polishing layer, having top and bottom surfaces, and comprising:
- the plurality of grooves formed in the polishing pad comprising first and second sets of grooves located entirely within the polishing pad;
- the first set of grooves located on the top surface of the polishing pad, has a pattern and each of the grooves in the first set of grooves vertically penetrates into the top surface of polishing pad to at least 50% of the polishing pad thickness;
- and
- the second set of grooves is located on the bottom surface of the polishing pad and each of the grooves in the second set of grooves vertically penetrates into the bottom surface of polishing pad toward the top surface to at least 50% of the polishing pad thickness;
- and wherein the first set of grooves is located between and interlaced at the interior ends with the second set of grooves, without any intersections between the first and second set of grooves, and are configured to present a continues groove to the material being polished from the top of the pad to within 6 percent of the bottom of the polishing pad.
10 more elements
Dependencies are inferred from the claim text.