Semiconductor device and method for manufacturing same

A semiconductor device comprising a substrate and a thin-film transistor which is supported on the substrate,

• wherein the thin-film transistor includes:
• an oxide semiconductor layer which includes a channel region and a source contact region and a drain contact region that are located on right- and left-hand sides of the channel region;
• a gate electrode which is arranged between the substrate and the oxide semiconductor layer so as to overlap with at least the channel region of the oxide semiconductor layer;
• a gate insulating layer which has been formed between the gate electrode and the oxide semiconductor layer;
• a source electrode which is electrically connected to the source contact region;
• and
• a drain electrode which is electrically connected to the drain contact region, and
• wherein the source electrode is electrically connected to a source bus line, and
• wherein the source electrode, the source bus line and the drain electrode include a first metallic element and the oxide semiconductor layer includes a second metallic element, and
• wherein when viewed along a normal to the substrate, at least respective portions of the source electrode, the source bus line, and the drain electrode overlap with the oxide semiconductor layer, and
• wherein a low reflecting layer which includes the first and second metallic elements and which has a lower reflectance to visible radiation than the source electrode has been formed between the source electrode and the oxide semiconductor layer, between the source bus line and the oxide semiconductor layer, and between the drain electrode and the oxide semiconductor layer.