3d high resolution x-ray sensor with integrated scintillator grid

A method of fabricating an indirect X-ray sensor, comprising:

• providing a silicon wafer having a front side and a back side opposite the front side;
• forming an array of grid holes on the back side of the silicon wafer;
• forming an array of photodiodes on the front side of the silicon wafer with each of the photodiodes having a contact on the front side of the silicon wafer and self-aligned with a respective grid hole of the array of grid holes;
• filling each of the grid holes with a scintillator configured to convert beams of X-ray into light;
• forming one or more silicon dies with an array of photo-sensing circuits, each of the photo-sensing circuits having a contact at a top surface of the one or more silicon dies;
• and
• aligning and bonding the contact on each of the photodiodes to the contact of a respective photo-sensing circuit of the array of photo-sensing circuits of the one or more silicon dies,
• wherein light converted from beams of X-ray by the scintillators within the grid holes is converted into electron-hole pairs by the photodiodes altering a voltage across the photodiodes, and
• wherein the voltage is sensed by the photo-sensing circuits through the contacts on the photodiodes and the contacts on the photo-sensing circuits.