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US 2016/0097145 A1Published application
Thermal diffusion doping of diamond
AssigneeWisconsin Alumni Research Foundation
InventorsZhenqiang Ma, Jung-Hun Seo
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Abstract
Boron-doped diamond and methods for making it are provided. The doped diamond is made using an ultra-thin film of heavily boron-doped silicon as a dopant carrying material in a low temperature thermal diffusion doping process.
Claims20
Boron-doped diamond comprising:
- a layer of diamond comprising a doped region extending into the layer from a surface, the doped region comprising substitutional boron dopant atoms, wherein the concentration of substitutional boron dopant atoms at the surface is at least 1×1018 cm−3 and the depth profile of the substitutional boron dopant atoms corresponds to a complimentary-error-function.
A method of making substitutionally boron-doped diamond, the method comprising:
- bonding a boron-doped single-crystalline silicon nanomembrane to the surface of a layer of diamond;
- and
- annealing the diamond and the nanomembrane at a temperature of at least 700° C. for a time sufficient to allow boron dopant atoms from the nanomembrane to diffuse into the layer of diamond to form a doped region in the diamond.
Dependencies are inferred from the claim text.