Axial Gradient Transport (AGT) Growth Process and Apparatus Utilizing Resistive Heating

An apparatus for axial gradient growth of silicon carbide by sublimation comprising:

• a crucible having a top, a bottom and a side that extends between the top of the crucible and the bottom of the crucible, said crucible adapted to support a seed crystal at the top of an interior of the crucible and a source material in the interior of the crucible in spaced relation between the seed crystal and the bottom of the crucible and in contact with the side of the crucible, the space between the source material and the bottom of the crucible defining a cavity in the interior of the crucible;
• a first, disk-shaped resistance heater disposed in spaced relation above the top of the crucible;
• and
• a second, cup-shaped resistance heater having a first, disk-shaped section disposed in spaced relation beneath the bottom of the crucible and a second, cylindrical-shaped section disposed in spaced relation around the outside of the side of the crucible and extending from the first, disk-shaped section of the second resistance heater in the direction toward the first, disk-shaped resistance heater and terminating intermediate the top and the bottom of the crucible.