Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A substrate processing apparatus, comprising:

• a process chamber configured to accommodate a substrate;
• a precursor gas supply system configured to supply a precursor gas to the substrate in the process chamber;
• an oxygen-containing gas supply system configured to supply an oxygen-containing gas to the substrate in the process chamber;
• a hydrogen-containing gas supply system configured to supply a hydrogen-containing gas to the substrate in the process chamber;
• an exhaust system configured to exhaust a gas from the process chamber;
• and
• a control part configured to control the precursor gas supply system, the oxygen-containing gas supply system, the hydrogen-containing gas supply system and the exhaust system so as to perform a process of forming a film on the substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
• supplying the precursor gas to the substrate in the process chamber;
• exhausting the precursor gas from the process chamber;
• supplying the oxygen-containing gas to the substrate in the process chamber;
• exhausting the oxygen-containing gas from the process chamber;
• supplying the hydrogen-containing gas to the substrate in the process chamber;
• and
• exhausting the hydrogen-containing gas from the process chamber,
• wherein at least one among an amount of an exhausted gas and an exhaust rate in the act of exhausting the oxygen-containing gas is set greater than an amount of an exhausted gas or an exhaust rate in the act of exhausting the precursor gas, and
• at least one among an amount of an exhausted gas and an exhaust rate in the act of exhausting the hydrogen-containing gas is set greater than the amount of the exhausted gas or the exhaust rate in the act of exhausting the precursor gas.

A non-transitory computer-readable recording medium storing a program that causes a computer to perform a process of forming a film on a substrate accommodated in a process chamber by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:

• supplying a precursor gas to the substrate in the process chamber;
• exhausting the precursor gas from the process chamber;
• supplying an oxygen-containing gas to the substrate in the process chamber;
• exhausting the oxygen-containing gas from the process chamber;
• supplying a hydrogen-containing gas to the substrate in the process chamber;
• and
• exhausting the hydrogen-containing gas from the process chamber,
• wherein at least one among an amount of an exhausted gas and an exhaust rate in the act of exhausting the oxygen-containing gas is set greater than an amount of an exhausted gas or an exhaust rate in the act of exhausting the precursor gas, and
• at least one among an amount of an exhausted gas and an exhaust rate in the act of exhausting the hydrogen-containing gas is set greater than the amount of the exhausted gas or the exhaust rate in the act of exhausting the precursor gas.