Atomic layer deposition chamber with thermal lid

A substrate processing chamber, comprising:

• a chamber body;
• and
• a chamber lid assembly coupled to the chamber body to define a processing volume within the chamber body and beneath the chamber lid assembly, wherein the chamber lid assembly comprises:
• a housing enclosing a central channel that extends along a central axis and has an upper portion and a lower portion;
• a lid plate coupled to the housing and having a contoured bottom surface that extends downwardly and outwardly from a central opening coupled to the lower portion of the central channel to a peripheral portion of the lid plate;
• a first heating element to heat the central channel;
• a second heating element to heat the bottom surface of the lid plate;
• a remote plasma source fluidly coupled to the central channel;
• and
• an isolation collar coupled between the remote plasma source and the housing, wherein the isolation collar has an inner channel extending through the isolation collar to fluidly couple the remote plasma source and the central channel.

A method of cleaning a process chamber, comprising:

• providing a cleaning gas to a remote plasma source;
• forming a plasma from the cleaning gas;
• flowing the plasma from the remote plasma source through an isolation collar and into a central channel and a reaction zone of a chamber lid assembly to vaporize byproducts on walls of the chamber lid assembly;
• and
• heating the chamber lid assembly to a predetermined temperature while the plasma is flowed into the central channel and the reaction zone.