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US 2016/0096725 A1Published application
Semiconductor device, display module, and electronic device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorAtsushi Umezaki
Life of this patent
Estimating the term…
Abstract
To reduce the amplitude voltage of control signals of a MEMS device. A semiconductor device includes a MEMS device, a first transistor, a second transistor whose source or drain is electrically connected to a source or a drain of the first transistor, a third transistor which sets the potential of a gate of the first transistor to a value at which the first transistor is turned on, a fourth transistor which sets the potential of the gate of the first transistor to a value at which the first transistor is turned off, and a fifth transistor which supplies a signal to a gate of the second transistor and a gate of the fourth transistor.
Claims14
A semiconductor device comprising:
- a first transistor;
- a second transistor;
- a third transistor;
- a fourth transistor;
- a fifth transistor;
- and
- a microelectromechanical systems device,
- wherein:
- one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor;
- one of a source and a drain of the third transistor is electrically connected to one of a source and a drain of the fourth transistor and to a gate of the first transistor;
- the other of the source and the drain of the third transistor is electrically connected to the other of the source and the drain of the first transistor;
- the other of the source and the drain of the fourth transistor is electrically connected to the other of the source and the drain of the second transistor;
- a gate of the fourth transistor is electrically connected to a gate of the second transistor;
- one of a source and a drain of the fifth transistor is electrically connected to the gate of the second transistor;
- and
- the microelectromechanical systems device is electrically connected to the one of the source and the drain of the first transistor.
13 more elements
A semiconductor device comprising:
- a first transistor;
- a second transistor;
- a third transistor;
- a fourth transistor;
- a fifth transistor;
- a sixth transistor;
- and
- a microelectromechanical systems device,
- wherein:
- one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor;
- one of a source and a drain of the third transistor is electrically connected to one of a source and a drain of the fourth transistor and to a gate of the first transistor;
- the other of the source and the drain of the third transistor is electrically connected to the other of the source and the drain of the first transistor;
- the other of the source and the drain of the fourth transistor is electrically connected to the other of the source and the drain of the second transistor;
- a gate of the fourth transistor is electrically connected to a gate of the second transistor;
- one of a source and a drain of the fifth transistor is electrically connected to the gate of the second transistor;
- one of a source and a drain of the sixth transistor is electrically connected to the gate of the second transistor;
- the other of the source and the drain of the sixth transistor is electrically connected to the other of the source and the drain of the second transistor;
- and
- the microelectromechanical systems device is electrically connected to the one of the source and the drain of the first transistor.
16 more elements
A semiconductor device comprising:
- a first transistor;
- a second transistor;
- a third transistor;
- a fourth transistor;
- a fifth transistor;
- and
- a microelectromechanical systems device,
- wherein:
- the first to fifth transistors each comprise a channel formation region in an oxide semiconductor;
- one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor;
- one of a source and a drain of the third transistor is electrically connected to one of a source and a drain of the fourth transistor and to a gate of the first transistor;
- the other of the source and the drain of the third transistor is electrically connected to the other of the source and the drain of the first transistor;
- the other of the source and the drain of the fourth transistor is electrically connected to the other of the source and the drain of the second transistor;
- a gate of the fourth transistor is electrically connected to a gate of the second transistor;
- one of a source and a drain of the fifth transistor is electrically connected to the gate of the second transistor;
- and
- the microelectromechanical systems device is electrically connected to the one of the source and the drain of the first transistor.
14 more elements
A semiconductor device comprising:
- a first transistor;
- a second transistor;
- a third transistor;
- a fourth transistor;
- a fifth transistor;
- a sixth transistor;
- and
- a microelectromechanical systems device,
- wherein:
- the first to sixth transistors each comprise a channel formation region in an oxide semiconductor;
- one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor;
- one of a source and a drain of the third transistor is electrically connected to one of a source and a drain of the fourth transistor and to a gate of the first transistor;
- the other of the source and the drain of the third transistor is electrically connected to the other of the source and the drain of the first transistor;
- the other of the source and the drain of the fourth transistor is electrically connected to the other of the source and the drain of the second transistor;
- a gate of the fourth transistor is electrically connected to a gate of the second transistor;
- one of a source and a drain of the fifth transistor is electrically connected to the gate of the second transistor;
- one of a source and a drain of the sixth transistor is electrically connected to the gate of the second transistor;
- the other of the source and the drain of the sixth transistor is electrically connected to the other of the source and the drain of the second transistor;
- and
- the microelectromechanical systems device is electrically connected to the one of the source and the drain of the first transistor.
17 more elements
Dependencies are inferred from the claim text.