Systems and Methods for Treating Substrates with Cryogenic Fluid Mixtures

A method for treating a microelectronic substrate, comprising receiving the microelectronic substrate in a vacuum process chamber comprising a gas expansion component comprising an inlet and an outlet;

• positioning the substrate opposite the gas expansion component within 50 mm of the outlet;
• supplying, to the fluid expansion component, a gas mixture comprising:
• a pressure greater than atmospheric pressure;
• and
• a temperature that is less than 273K and greater than a condensation temperature of the gas mixture at the pressure;
• providing the gas mixture into the process chamber through the gas expansion component such that at least a portion of the gas mixture will contact the microelectronic substrate, the process chamber being maintained at a chamber pressure of 35 Torr or less;
• and
• removing objects from the microelectronic substrate using the portion of the gas mixture that contacts the microelectronic substrate.