Parylene deposition process
OwnerKelvin CHANinventor
Life of this patent
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Abstract
Embodiments of the disclosure generally related to methods of depositing parylene. The methods include introducing a first precursor into a processing chamber, and photolysing the first precursor into a second precursor using ultraviolet radiation. The second precursor is introduced into second and third regions of the processing chamber, separated by respective first and second showerheads. A substrate is exposed to the second precursor in the third region of the processing chamber to facilitate deposition of a parylene film on the substrate.
Claims20
A method of depositing parylene, comprising:
- introducing a first precursor into a first region of processing chamber;
- exposing the first precursor to ultraviolet radiation to cause photolysis of the first precursor into a second precursor;
- flowing the second precursor into a second region of the processing chamber, the second region separated from the first region by a first showerhead;
- flowing the second precursor into a third region of the processing chamber, the third region separated from the second region by a second showerhead;
- and
- exposing a substrate within the third region to the second precursor to form a parylene film on the substrate.
A method of depositing parylene, comprising:
- introducing a first precursor into a first region of processing chamber, the first precursor selected from the group consisting of [2.2]paracyclophane, dichloro[2.2]paracyclophane, tetrachloro[2.2]paracyclophane, 4,12-dibromo[2.2]paracyclophane, and octafluoro[2.2]paracyclophane;
- exposing the first precursor to ultraviolet radiation to cause photolysis of the first precursor into a second precursor comprising p-xylylene;
- flowing the second precursor into a second region of the processing chamber, the second region separated from the first region by a first showerhead;
- flowing the second precursor into a third region of the processing chamber, the third region separated from the second region by a second showerhead;
- and
- exposing a substrate within the third region to the second precursor to form a parylene film on the substrate.
A method of depositing parylene, comprising:
- introducing a first precursor into a first region of processing chamber, the first precursor selected from the group consisting of [2.2]paracyclophane, dichloro[2.2]paracyclophane, tetrachloro[2.2]paracyclophane, 4,12-dibromo[2.2]paracyclophane, and octafluoro[2.2]paracyclophane, wherein a temperature within the first region of the processing chamber is about 200 degrees Celsius or less;
- exposing the first precursor to ultraviolet radiation to cause photolysis of the first precursor into a second precursor comprising p-xylylene;
- flowing the second precursor into a second region of the processing chamber, the second region separated from the first region by a first showerhead;
- flowing the second precursor into a third region of the processing chamber, the third region separated from the second region by a second showerhead;
- and
- exposing a substrate within the third region to the second precursor to form a parylene film on the substrate, wherein the substrate is maintained at a temperature less than about 100 degrees Celsius during the exposing.
Dependencies are inferred from the claim text.