Image sensor with embedded infrared filter layer
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKeng-Yu CHOU, Kazuaki HASHIMOTO, Jen-Cheng LIU, Jhy-Jyi SZE, Wei-Chieh CHIANG, Pao-Tung CHEN
Life of this patent
Estimating the term…
Abstract
An image sensor includes a substrate, photosensitive devices, a color filter layer, a micro-lens layer and an infrared filter layer. The photosensitive devices are disposed in the substrate. The color filter layer is disposed to cover the photosensitive devices. The micro-lens layer is disposed on the color filter layer. The infrared filter layer directly covers the micro-lens layer.
Claims24
1-7. (canceled)
An image sensor, comprising:
- a substrate;
- a plurality of photosensitive devices disposed in the substrate;
- an infrared color filter structure disposed to cover the photosensitive devices;
- and
- a micro-lens layer disposed on the infrared color filter structure.
11-12. (canceled)
A method for manufacturing an image sensor, the method comprising:
- forming a plurality of photosensitive devices in a substrate;
- forming a color filter layer to cover the photosensitive devices;
- forming a micro-lens layer above the color filter layer;
- and
- forming an infrared filter layer above the substrate and adjacent to the color filter layer and/or the micro-lens layer.
15-17. (canceled)
(canceled)
Dependencies are inferred from the claim text.