Puf circuit based on ztc point of mosfet
AssigneeNingbo University
InventorsPengjun WANG, Xuelong ZHANG, Yuejun ZHANG
Life of this patent
Estimating the term…
Loading patent…
AssigneeNingbo University
InventorsPengjun WANG, Xuelong ZHANG, Yuejun ZHANG
Estimating the term…
A physical unclonable function (PUF) circuit based on a zero temperature coefficient (ZTC) point of a metal oxide semiconductor field effect transistor (MOSFET), the PUF circuit including at least one PUF circuit unit. Each PUF circuit unit includes: a deviation signal generating circuit module, a signal selection circuit, and a comparison output circuit. The deviation signal generating circuit module includes two deviation signal generating circuits. A control voltage input terminal of the deviation signal generating circuit is supplied with a control voltage, and the control voltage enables a first NMOS, a second NMOS, a third NMOS, a fourth NMOS, a fifth NMOS, a sixth NMOS, a seventh NMOS, and an eighth NMOS to work at a ZTC point.
A physical unclonable function (PUF) circuit based on a zero temperature coefficient (ZTC) point of a metal oxide semiconductor field effect transistor (MOSFET), the PUF circuit comprising at least one PUF circuit unit;
Dependencies are inferred from the claim text.