Integrated level shifter
AssigneeNavitas Semiconductor Limited
InventorsDaniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
Life of this patent
Estimating the term…
Abstract
GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits.
Claims23
A semiconductor device comprising:
- a level shift transistor having a ratio of output saturation current (Idsat) to output capacitor charge (Qoss) of greater than 1 ampere per nanocoulomb.
A level shift circuit comprising:
- an input referenced to ground;
- and
- an output referenced to a floating voltage;
- wherein the circuit is configured to be integrated on at least one GaN device.
Dependencies are inferred from the claim text.