Back to results
US 2016/0079930 A1Published application
Low Noise Amplifier
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorJun-De Jin
Life of this patent
Estimating the term…
Abstract
A low noise amplifier includes an amplifier transistor having a source, a gate, and a drain. An input node is coupled to the gate. An output node is coupled to the drain. An inductor is coupled between the gate and the drain.
Claims20
A low noise amplifier, comprising:
- an amplifier transistor having a source, a gate, and a drain;
- an input node coupled to the gate;
- an output node coupled to the drain;
- and
- a first inductor coupled between the gate and the drain.
2 more elements
A method, comprising:
- compensating a parasitic capacitance between a gate and a drain of an amplifier transistor in a low noise amplifier using a first inductor coupled between the gate and the drain;
- and
- providing an output signal at an output node coupled to the drain of the amplifier transistor.
A low noise amplifier, comprising:
- an NMOS amplifier transistor having a source, a gate, and a drain;
- an input node coupled to the gate;
- an output node coupled to the drain;
- a first inductor coupled between the gate and the drain, wherein the first inductor is arranged to compensate a parasitic capacitance between the gate and the drain of the amplifier transistor;
- and
- a second inductor coupled between the gate and a high voltage supply node, wherein the first inductor and the second inductor are arranged to compensate at least part of parasitic capacitances between the source and the gate, and between the source and the drain of the amplifier transistor in the low noise amplifier.
3 more elements
Dependencies are inferred from the claim text.