Integrated bias supply, reference and bias current circuits for gan devices
AssigneeNavitas Semiconductor Limited
InventorsDaniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
Life of this patent
Estimating the term…
Abstract
GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits.
Claims23
A power supply circuit comprising:
- a GaN-based depletion-mode transistor used as one of a voltage-limited voltage source or a voltage-limited current source.
An electronic power conversion component comprising:
- a package base;
- one or more GaN-based dies secured to the package base and including a power supply circuit comprising:
- a GaN-based depletion-mode transistor used as one of a voltage-limited voltage source or a voltage-limited current source.
A method of operating GaN-based power supply circuit, the method comprising:
- supplying power to a drain terminal of a GaN-based depletion-mode device having a first gate connected to ground and a first source connected to one or more series connected circuit elements including one or more intermediate nodes between each of the plurality of series connected circuit elements;
- and
- delivering power to one or more circuits from a second source of a GaN-based enhancement-mode device having a second gate coupled to one of the one or more intermediate nodes and a second drain connected to a power source.
Dependencies are inferred from the claim text.