Integrated semiconductor optical element and manufacturing method for same
AssigneeFujitsu Limited
InventorsKazumasa Takabayashi, Tsuyoshi Yamamoto
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Abstract
The present invention relates to an optical semiconductor integrated element and manufacturing method for same solves difficulty in element manufacture, and reduces optical transmission loss. The present invention is provided with a stripe-shaped waveguide configured from a multilayer structure wherein at least a first conductivity-type lower cladding layer, a waveguide core layer, and an upper cladding layer are layered, and the upper cladding layer is formed using a second conductivity-type upper cladding layer, and an i-type upper cladding layer, which has a bent portion by being shifted in the perpendicular direction with respect to the main extending direction of the waveguide.
Claims16
An integrated semiconductor optical element, comprising a waveguide in stripe form having a multilayer structure where at least a first conductivity type lower clad layer, a waveguide core layer and an upper clad layer are layered on top of a semiconductor substrate, characterized in that
- the upper clad layer has:
- second conductivity type upper clad layer portions that are of the conductivity type opposite to the first conductivity type and are separated from each other in the direction in which the waveguide runs;
- and an i type upper clad layer portion that connects the separated second conductivity type upper clad layer portions, and
- at least one waveguide region provided with an i type upper clad layer portion and at least two waveguide regions provided with a second conductivity type upper clad layer portion are shifted from each other in the direction perpendicular to the main direction in which the waveguide runs, and the waveguide region provided with an i type upper clad layer portion and the waveguide regions provided with a second conductivity type upper clad layer portion are connected through bent portions.
A manufacturing method for an integrated semiconductor optical circuit apparatus, characterized by comprising:
- depositing at least a first conductivity type lower clad layer, a waveguide core layer and a second conductivity type upper clad layer that are of the conductivity type opposite to the first conductivity type in this order on a semiconductor substrate;
- forming a first insulating film mask in linear stripe form on the upper side of the second conductivity type upper clad layer;
- selectively removing the exposed portions of the second conductivity type upper clad layer using the first insulating film mask as an etching mask;
- regrowing an i type upper clad layer in the portions from which the second conductivity type upper clad layer has been removed using the first insulating film mask as a selective growth mask;
- forming after the removal of the first insulating film mask a second insulating film mask having a pattern of stripes in the direction in which the stripes of the first insulating film mask run, including at least two portions formed on the regions corresponding to the second conductivity type upper clad layer portions, a portion formed on the region corresponding to the i type upper clad layer portion, and bending portions for connecting the portions formed on the regions corresponding to the second conductivity type upper clad layer portions to the portion formed on the region corresponding to the i type upper clad layer portion;
- and
- forming a waveguide by carrying out etching using the second insulating film mask as an etching mask until at least a part of the first conductivity type lower clad layer is removed.
Dependencies are inferred from the claim text.