Composition for surface-modifying insulator, method for surface-modifying insulator, insulator, and thin film transistor

A composition for surface-modifying an insulator, comprising:

• a compound including a structural unit represented by the following Chemical Formula 1, and a structural unit represented by the following Chemical Formula 2 on at least one terminal end:
• *—(CnF2nO)—* [Chemical Formula 1]
• wherein, in Chemical Formula 1,
• n is an integer of 1 or more,
• wherein, in Chemical Formula 2,
• each of Ra to Rc are independently one of a C1 to C10 alkyl group, provided that at least one of Ra to Rc is one of a C1 to C30 alkoxy group, a halogen, a hydroxy group, and a carboxyl group,
• L1 is one of a single bond, —O—, a substituted or unsubstituted C1 to C30 alkylene group, a substituted or unsubstituted C3 to C30 cycloalkylene group, a substituted or unsubstituted C2 to C30 alkenylene group, a substituted or unsubstituted C6 to C30 arylene group, and a combination thereof, and
• each of m and k are independently integers of 0 or more.