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US 2016/0079531 A1Published application
Resistance variable memory device with nanoparticle electrode and method of fabrication
AssigneeMicron Technology, Inc.
InventorsJun Liu, Kristy A. Campbell
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Abstract
A chalcogenide-based programmable conductor memory device and method of forming the device, wherein a nanoparticle is provided between an electrode and a chalcogenide glass region. The method of forming the nanoparticle utilizes a template over the electrode or random deposition of the nanoparticle.
Claims20
A method of forming a chalcogenide-based programmable conductor memory device, comprising:
- forming a first electrode;
- forming an aluminum layer over said first electrode;
- anodizing said aluminum layer such that about one nanochannel is formed therein to said first electrode;
- depositing a layer of nanoparticle material over said anodized aluminum layer, within said nanochannel, and over said first electrode where exposed in said nanochannel;
- selectively removing said anodized aluminum layer and the nanoparticle material thereover to leave about one nanoparticle on said first electrode;
- providing a first germanium selenide layer over said first electrode and said nanoparticle;
- and
- providing a second electrode over said first germanium selenide layer.
5 more elements
A method of forming a chalcogenide-based programmable conductor memory device, comprising:
- forming a first electrode;
- forming about one nanoparticle on said first electrode by chemical vapor deposition;
- and
- providing a first germanium selenide layer over said first electrode and said nanoparticle.
1 more element
Dependencies are inferred from the claim text.