Nonvolatile memory device and method for manufacturing same
AssigneeHitachi, Ltd.
InventorsYoshitaka SASAGO, Masaharu KINOSHITA, Mitsuharu TAI, Akio SHIMA, Kenzo KUROTSUCHI, Takashi KOBAYASHI
Life of this patent
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Abstract
When a thin channel semiconductor layer formed on a side wall of a stacked film in which insulating films and gate electrodes are alternately stacked together is removed on the stacked film, a contact resistance between a vertical transistor including the channel semiconductor layer and the gate electrode, and a bit line formed on the stacked film is prevented from rising. As its means, a conductive layer electrically connected to the channel semiconductor layer is disposed immediately above the stacked film.
Claims8
1-10. (canceled)
A method for manufacturing a nonvolatile storage device, comprising the steps of:
- (a) forming, on a semiconductor substrate, a first conductive layer extended in a first direction along a main surface of the semiconductor substrate;
- (b) forming, on the first conductive layer, a stacked film in which (N+1) (N is an integer of N≧1) first insulator films and N second conductive layers are alternately stacked together;
- (c) forming a third conductive layer on the stacked film;
- (d) forming a second insulator film on a side wall of the stacked film, and forming a first semiconductor layer and a memory material layer, which are electrically connected to the third conductive layer, on a sidewall of the second insulator film which comes out of contact with the stacked film;
- and
- (e) after the step (d), forming, on the third conductive layer, a fourth conductive layer electrically connected to the third conductive layer, and extended in a second direction orthogonal to the first direction.
Dependencies are inferred from the claim text.