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US 2016/0079528 A1Published application
Memory component, memory device, and method of operating memory device
AssigneeSony Corporation
InventorsKazuhiro Ohba, Shuichiro Yasuda, Tetsuya Mizuguchi, Katsuhisa Aratani, Masayuki Shimuta, Akira Kouchiyama, Mayumi Ogasawara
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Abstract
A memory component including first and second electrodes with a memory layer therebetween, the memory layer having first and second memory layers, the first memory layer containing aluminum and a chalcogen element of tellurium, the second memory layer between the first memory layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide.
Claims14
A memory device comprising:
- a first electrode;
- a second electrode;
- and
- a memory layer between the first and second electrodes,
- wherein,
- the memory layer includes (a) a first memory layer an ion source material, and (b) a second memory layer between the first memory layer and the first electrode and containing an aluminum oxide and a transition metal oxide, a transition metal oxynitride, or both.
3 more elements
Dependencies are inferred from the claim text.