Back to results
US 2016/0079526 A1Published application
Storage device and storage unit
OwnerHiroaki Sei, Kazuhiro Ohba +2inventors
InventorsHIROAKI SEI, KAZUHIRO OHBA, TAKEYUKI SONE, MINORU IKARASHI
Life of this patent
Estimating the term…
Abstract
A storage device includes: a first electrode; a storage layer including an ion source layer; and a second electrode. The first electrode, the storage layer, and the second electrode are provided in this order. The ion source layer contains a movable element, and has a volume resistivity of about 150 mΩ·cm to about 12000 mΩ·cm both inclusive.
Claims20
A storage device, comprising:
- a first electrode;
- a second electrode;
- and
- a storage layer between the first electrode and the second electrode, the storage layer including an ion source layer,
- wherein the ion source layer is positively or negatively ionized by application of an electric field, and
- wherein the ion source layer has a volume resistivity of at least 150 mΩ·cm and less than or equal to 12000 mΩ·cm such that the storage layer has a low resistance state corresponding to first stored information, a high resistance state corresponding to second stored information, and at least one intermediate resistance state, between the low resistance state and the high resistance state, corresponding to third stored information.
3 more elements
A storage unit with a plurality of storage devices and a pulse applier that selectively applies a voltage pulse or a current pulse to the storage devices, the storage devices each comprising:
- a first electrode;
- a second electrode;
- and
- a storage layer between the first electrode and the second electrode, the storage layer including an ion source layer
- wherein the ion source layer is positively or negatively ionized by application of an electric field, and
- wherein the ion source layer has a volume resistivity of at least 150 mΩ·cm and less than or equal to 12000 mΩ·cm such that the storage layer has a low resistance state corresponding to first stored information, a high resistance state corresponding to second stored information, and at least one intermediate resistance state, between the low resistance state and the high resistance state, corresponding to third stored information.
3 more elements
Dependencies are inferred from the claim text.