Semiconductor apparatus and method for fabricating the same
AssigneeSK hynix Inc.
InventorJae Sung YOON
Life of this patent
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Abstract
A method for fabricating a semiconductor apparatus includes forming a variable resistor region, and forming a spacer having a top linewidth and a bottom linewidth substantially equal to each other in the variable resistor region. The forming of the spacer includes forming a first insulating layer in the variable resistor region through a first method, forming a second insulating layer along a surface of the first insulating layer in the variable resistor region through a second method for providing step coverage superior to the first method, and etching the first and second insulating layers.
Claims14
A method for fabricating a semiconductor apparatus, the method comprising:
- forming a variable resistor region;
- and
- forming a spacer having a substantially uniform width from a top to a bottom of the spacer in the variable resistor region,
- wherein the forming of the spacer includes:
- forming a first insulating layer in the variable resistor region through a first method;
- forming a second insulating layer over a surface of the first insulating layer in the variable resistor region through a second method, wherein the second method has step coverage superior to the first method;
- and
- etching the first and the second insulating layers.
The method of claim 6,
- wherein the forming of the second insulating layer includes forming a seam inside the second insulating layer, and
- wherein the seam increases in size as going from a top toward a bottom of the second insulating layer. The method of claim 8,
- wherein the etching of the first and the second insulating layers includes etching the first and the second insulating layers in such a manner that upper portions of the first and the second insulating layers are etched more than lower portions of the first and the second insulating layers.
The method of claim further comprising:
- after the forming of the spacer,
- forming a variable resistor device, which is in contact with the lower electrode, in the hole in which the spacer is formed;
- and
- forming an upper electrode over the variable resistor device to be coupled to the variable resistor device.
A semiconductor apparatus comprising:
- a lower electrode;
- a variable resistor device including a first variable resistor device and a second variable resistor device, wherein the first variable resistor device is formed over and coupled to the lower electrode and has a substantially uniform width from a top to a bottom of the first variable resistor device, wherein the second variable resistor device is formed over an upper surface of and coupled to the first variable resistor device and has a width larger than that of the first variable resistor device;
- and
- a spacer formed over an outer circumference of the first variable resistor device.
Dependencies are inferred from the claim text.