Low voltage embedded memory having conductive oxide and electrode stacks
AssigneeIntel Corporation
InventorsElijah V. Karpov, Brian S. Doyle, Charles C. Kuo, Robert S. Chau, Eric R. Dickey, Michael Stephen Bowen, Sey-Shing Sun
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Abstract
Low voltage embedded memory having conductive oxide and electrode stacks is described. For example, a material layer stack for a memory element includes a first conductive electrode. A conductive oxide layer is disposed on the first conductive electrode. The conductive oxide layer has a plurality of oxygen vacancies therein. A second electrode is disposed on the conductive oxide layer.
Claims22
A non-volatile memory device, comprising:
- a first conductive electrode;
- a conductive oxide layer disposed on the first conductive electrode;
- and
- a second electrode disposed on the conductive oxide layer;
- a transistor electrically connected to the first or the second electrode, a source line, and a word line;
- and
- a bit line electrically coupled with the other of the first or the second electrode.
A method of operating a non-volatile memory device, the comprising:
- applying a positive bias to a memory element, the memory element comprising a first conductive electrode, a conductive oxide layer disposed on the first conductive electrode, and a second electrode disposed on the conductive oxide layer;
- and
- changing the conductive oxide layer from a less conductive state to a more conductive state by the applying.
A method of operating a non-volatile memory device, the comprising:
- applying a negative bias to a memory element, the memory element comprising a first conductive electrode, a conductive oxide layer disposed on the first conductive electrode, and a second electrode disposed on the conductive oxide layer;
- and
- changing the conductive oxide layer from a more conductive state to a less conductive state by the applying.
Dependencies are inferred from the claim text.