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US 2016/0079522 A1Published application
Memory device
AssigneeKabushiki Kaisha Toshiba
InventorKazuhiko YAMAMOTO
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Abstract
According to one embodiment, a memory device includes a plug, a variable resistance film provided on the plug, and an electrode provided on the variable resistance film. The variable resistance film includes, a first portion having a superlattice structure, and a second portion having an amorphous structure.
Claims22
A memory device, comprising:
- a plug;
- a variable resistance film provided on the plug;
- and
- an electrode provided on the variable resistance film,
- the variable resistance film including:
- a first portion having a superlattice structure;
- and
- a second portion having an amorphous structure,
- the plug includes:
- an insulating member;
- and
- a conductive member provided on a bottom surface of the insulating member and on a side surface of the insulating member,
- the first portion contacts with at least a part of the conductive member.
10 more elements
3-4. (canceled)
The memory device according to claim 15, further comprising an electrical conduction film including carbon nanotubes provided between the variable resistance film and the electrode.
A memory device, comprising:
- a semiconductor substrate;
- a plurality of first interconnects provided on the semiconductor substrate to extend in a first direction;
- a plurality of second interconnects provided on a first interconnect layer to extend in a second direction crossing the first direction;
- and
- a plurality of variable resistance films connected between each of the first interconnects and each of the second interconnects,
- each of the variable resistance films including:
- a first portion having a superlattice structure;
- and
- a second portion having an amorphous structure,
- an oxygen concentration of the second portion being higher than an oxygen concentration of the first portion.
7 more elements
(canceled)
A memory device, comprising:
- a plug;
- a variable resistance film provided on the plug;
- and
- an electrode provided on the variable resistance film,
- the variable resistance film including:
- a first portion having a superlattice structure;
- and
- a second portion having an amorphous structure,
- an upper surface of the second portion is positioned higher than an upper surface of the first portion.
6 more elements
Dependencies are inferred from the claim text.