Magnetic memory device and method of manufacturing magnetic memory device
AssigneeKabushiki Kaisha Toshiba
InventorsMasatoshi YOSHIKAWA, Satoshi SETO, Shuichi TSUBATA, Kazuhiro TOMIOKA
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Abstract
According to one embodiment, a method of manufacturing a magnetic memory device includes a stack structure formed of a plurality of layers including a magnetic layer, the method includes forming a lower structure film including at least one layer, etching the lower structure film to form a lower structure of the stack structure, forming an upper structure film including at least one layer on a region including the lower structure, and etching the upper structure film to form an upper structure of the stack structure on the lower structure.
Claims20
A method of manufacturing a magnetic memory device comprising a stack structure formed of a plurality of layers including a magnetic layer, the method comprising:
- forming a lower structure film including at least one layer;
- etching the lower structure film to form a lower structure of the stack structure;
- forming an upper structure film including at least one layer on a region including the lower structure;
- and
- etching the upper structure film to form an upper structure of the stack structure on the lower structure.
A magnetic memory device comprising a stack structure formed of a plurality of layers including a magnetic layer, the device comprising:
- a lower structure of the stack structure, the lower structure including at least one layer;
- and
- an upper structure of the stack structure, the upper structure being formed on the lower structure and including at least one layer, wherein
- the lower structure includes a portion located outside the upper structure when viewed from a direction parallel to a stack direction of the stack structure, and
- an upper corner portion of the lower structure has a concave shape.
A magnetic memory device comprising a stack structure formed of a plurality of layers including a magnetic layer, the device comprising:
- a lower structure of the stack structure, the lower structure including at least one layer;
- and
- an upper structure of the stack structure, the upper structure being formed on the lower structure and including at least one layer, wherein
- the lower structure includes a portion located outside the upper structure when viewed from a direction parallel to a stack direction of the stack structure,
- the lower structure includes a first portion which includes an upper corner of the lower structure and a portion adjacent to the upper corner, and a second portion which includes a portion of the lower structure excluding the first portion,
- a predetermined ion is contained in the first portion, and
- a concentration of the predetermined ion in the first portion is higher than that in the second portion.
Dependencies are inferred from the claim text.