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US 2016/0079518 A1Published application
Magnetic memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsUng-hwan PI, Kwang-seok KIM, Kee-won KIM, Sung-chul LEE, Young-man JANG
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Abstract
Provided is a magnetic memory device. The magnetic memory device includes a first magnetization layer, a tunnel barrier disposed on the first magnetization layer, a second magnetization layer disposed on the tunnel barrier, and a spin current assisting layer disposed on at least a portion of a sidewall of the second magnetization layer.
Claims20
A magnetic memory device comprising:
- a first magnetization layer;
- a tunnel barrier disposed on the first magnetization layer;
- a second magnetization layer disposed on the tunnel barrier;
- and
- a spin current assisting layer disposed on at least a portion of a sidewall of the second magnetization layer.
2 more elements
A magnetic memory device comprising:
- a pinned layer including a first magnetization layer;
- a free layer including a second magnetization layer;
- a tunnel barrier interposed between the pinned layer and the free layer;
- and
- a spin current assisting layer formed on at least a portion of a sidewall of the free layer, wherein the spin current assisting layer is in contact with at least a portion of the tunnel barrier.
2 more elements
A magnetic memory device comprising:
- a magnetic tunnel junction (MTJ) structure including a first magnetization layer, a second magnetization layer, and a tunnel barrier interposed between the first and second magnetization layers;
- and
- a spin current assisting layer on a portion of a sidewall of the MTJ structure.
Dependencies are inferred from the claim text.