Method of manufacturing nitride semiconductor light emitting element having thick metal bump
AssigneeNichia Corporation
InventorsAkinori YONEDA, Hirofumi KAWAGUCHI, Kouichiroh DEGUCHI
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Abstract
A manufacturing method of a flip-chip nitride semiconductor light emitting element includes a step of providing a nitride semiconductor light emitting element structure; a protective layer forming step; a first resist pattern forming step; a protective layer etching step; a first metal layer forming step; a first resist pattern removing step; a third metal layer forming step; a second resist pattern forming step; a second metal layer forming step; a second resist pattern removing step; and a third metal layer removing step.
Claims18
A manufacturing method of a flip-chip nitride semiconductor light emitting element comprising:
- a step of providing a nitride semiconductor light emitting element structure including an n-type nitride semiconductor layer and a p-type nitride semiconductor layer, which are laminated on a substrate, wherein an n-side electrode connecting surface of the n-type nitride semiconductor layer and a p-side electrode connecting surface of the p-type nitride semiconductor layer are on the same side of the substrate;
- a protective layer forming step of forming an insulating protective layer on the nitride semiconductor light emitting element structure;
- a first resist pattern forming step of forming a first resist pattern having openings above the n-side electrode connecting surface and the p-side electrode connecting surface;
- a protective layer etching step of etching the protective layer to expose the n-side electrode connecting surface and the p-side electrode connecting surface using the first resist pattern as a mask;
- a first metal layer forming step of forming a first metal layer that becomes an n-side electrode and a p-side electrode on the n-side electrode connecting surface, the p-side electrode connecting surface, and the first resist pattern, before removing the first resist pattern;
- a first resist pattern removing step of removing the first resist pattern;
- a third metal layer forming step of forming a third metal layer on the first metal layer and the protective layer;
- a second resist pattern forming step of forming a second resist pattern having openings above the n-side electrode connecting surface and the p-side electrode connecting surface on which the third metal layer is formed;
- a second metal layer forming step of forming a second metal layer that becomes metal bumps by electrolytic plating using the third metal layer as an electrode for the electrolytic plating;
- a second resist pattern removing step of removing the second resist pattern;
- and
- a third metal layer removing step of removing the third metal layer.
Dependencies are inferred from the claim text.