Semiconductor device and a method of making a semiconductor device

An LED device capable of emitting electromagnetic radiation ranging from about 200 nm to 365 nm, the device comprising:

• a substrate member, the substrate member being selected from sapphire, silicon, quartz, gallium nitride, gallium aluminum nitride, or others;
• an active region overlying the substrate region, the active region comprising a light emitting spatial region comprising a p-n junction and characterized by a current crowding feature of electrical current provided in the active region, the light emitting spatial region configured with the sloped mesa region such that a ratio of the sloped mesa region to the light emitting spatial region ranges from 1 to 4;
• an optical structure spatially disposed separate and apart the light emitting spatial region and is configured to facilitate light extraction from the active region;
• wherein the LED device is configured to extract greater than 7 percent to 50 percent of electromagnetic radiation generated within the active region.

An LED device capable of emitting electromagnetic radiation ranging from about 200 nm to 365 nm, the device comprising:

• a substrate member, the substrate member being selected from sapphire, silicon, quartz, gallium nitride, gallium aluminum nitride, or others;
• an active region overlying the substrate region, the active region comprising a light emitting spatial region comprising a p-n junction and characterized by a current crowding feature of electrical current provided in the active region, the light emitting spatial region configured with the sloped mesa region such that a ratio of the sloped mesa region to the light emitting spatial region ranges from 1 to 4;
• an optical structure spatially disposed separate and apart the light emitting spatial region and is configured to facilitate light extraction from the active region;
• wherein the LED device is configured to extract greater than 7 percent to 90 percent of electromagnetic radiation generated within the active region.

A method for fabricating an LED device capable of emitting electromagnetic radiation ranging from about 200 nm to 365 nm, the method comprising:

• providing a substrate member, the substrate member being selected from sapphire, silicon, quartz, gallium nitride, gallium aluminum nitride, or others;
• forming an active region overlying the substrate region, the active region comprising a light emitting spatial region comprising a p-n junction and characterized by a current crowding feature of electrical current provided in the active region, the light emitting spatial region being characterized by about 1 to 10 microns, the light emitting spatial region configured with the sloped mesa region such that a ratio of the sloped mesa region to the light emitting spatial region ranges from 1 to 4;
• and
• forming an optical structure spatially disposed separate and apart the light emitting spatial region and is configured to facilitate light extraction from the active region.

A method for fabricating an LED device capable of emitting electromagnetic radiation ranging from about 200 nm to 365 nm, the method comprising:

• providing a substrate member, the substrate member being selected from sapphire, silicon, quartz, gallium nitride, gallium aluminum nitride, or others;
• forming an active region overlying the substrate region, the active region comprising a light emitting spatial region comprising a p-n junction and characterized by a current crowding feature of electrical current provided in the active region, the light emitting spatial region being characterized by about 1 to 10 microns, the light emitting spatial region configured with the sloped mesa region such that a ratio of the sloped mesa region to the light emitting spatial region ranges from 1 to 4;
• and
• forming an optical structure spatially disposed separate and apart the light emitting spatial region and is configured to facilitate light extraction from the active region, wherein the LED device is configured to extract greater than 7 percent to 50 percent of electromagnetic radiation generated within the active region.

A method for fabricating an LED device capable of emitting electromagnetic radiation ranging from about 200 nm to 365 nm, the method comprising:

• providing a substrate member, the substrate member being selected from sapphire, silicon, quartz, gallium nitride, gallium aluminum nitride, or others;
• forming an active region overlying the substrate region, the active region comprising a light emitting spatial region comprising a p-n junction and characterized by a current crowding feature of electrical current provided in the active region, the light emitting spatial region being characterized by about 1 to 10 microns, the light emitting spatial region configured with the sloped mesa region such that a ratio of the sloped mesa region to the light emitting spatial region ranges from 1 to 4;
• and
• forming an optical structure spatially disposed separate and apart the light emitting spatial region and is configured to facilitate light extraction from the active region;
• wherein the LED device is configured to extract greater than 7 percent to 90 percent of electromagnetic radiation generated within the active region.