Semiconductor device and manufacturing method of semiconductor device

A manufacturing method of a semiconductor device comprising:

• stretching a first support supporting a plurality of semiconductor chips arranged in an initial pitch, and expanding pitches of the plurality of semiconductor chips from the initial pitch to a first pitch;
• transferring a first group from the first support to a second support, the first group selected from the plurality of semiconductor chips by the first support, the plurality of semiconductor chips arranged in the first pitch, the first group arranged in a second pitch being longer than the first pitch on the first support;
• forming an insulating layer around each of the semiconductor chips, the insulating layer covering each of the semiconductor chips in the first group arranged in the second pitch;
• and
• dicing the insulating layer.

A semiconductor device comprising:

• a semiconductor chip;
• and
• an insulating layer provided around the semiconductor chip and covering the semiconductor chip,
• wherein a diagonal line joining a first corner portion and a second corner portion of the semiconductor chip crosses a diagonal line joining a third corner portion and a fourth corner portion of the insulating layer, the third corner portion being nearest to the first corner portion of the semiconductor chip, and the fourth corner portion being nearest to the second corner portion of the semiconductor chip in the insulating layer.