Semiconductor light-emitting device and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsKei KANEKO, Rei HASHIMOTO, Satoshi MITSUGI, Chie HONGO
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Abstract
A semiconductor light-emitting device includes a first layer having a first surface and an opposing second surface. The first surface has a roughness including a bottom portion and a top portion. A light emitting layer is provided between the second surface and a second layer. An insulating layer is provided on the first surface. The insulating layer includes a first portion adjacent to the bottom portion and a second portion adjacent to the top portion along the first direction. The first portion has a thickness that is greater than a thickness of the second portion.
Claims20
A semiconductor light-emitting device, comprising:
- a first layer having a first surface and a second surface opposing the first surface and spaced from the first surface in a first direction crossing the second surface, the first layer including a first semiconductor layer of a first conductivity type, the first surface of the first layer having a roughness including a bottom portion and a top portion, a first distance along the first direction between the bottom portion and the second surface being less than a second distance along the first direction between the top portion and the second surface;
- a light emitting layer adjacent to the second surface;
- a second layer including a second semiconductor layer of a second conductivity type, the light emitting layer being between the second surface and the second layer in the first direction;
- and
- an insulating layer on the first surface, wherein
- the insulating layer includes a first portion adjacent to the bottom portion and a second portion adjacent to the top portion, and
- a first thickness of the first portion along the first direction is greater than a second thickness of the second portion along the first direction.
A light-emitting device, comprising:
- a light emitting body including a light emitting layer and a first surface from which light generated in the light emitting layer is to be emitted, the first surface having a roughness including a peak portion and a valley portion;
- and
- a first insulating material filling the valley portion to a first thickness along a first direction crossing the light emitting layer, the first thickness being less than a distance along the first direction from a point in the valley portion that is closest to the light emitting layer to a point in the peak portion that is farthest from the light emitting layer.
A method of manufacturing a semiconductor light-emitting device, the method comprising:
- forming a laminate body including:
- a first layer having a first surface and a second surface opposing the surface and spaced from the first surface in a first direction crossing the second surface, the first layer comprising a first semiconductor layer of a first conductivity type, the first surface of the first layer having a roughness including a bottom portion and a top portion, a first distance along the first direction between the bottom portion and the second surface being less than a second distance along the first direction between the top portion and the second surface,
- a light emitting layer adjacent to the second surface, and
- a second layer including a second semiconductor layer of a second conductivity type, the light emitting layer being between the second surface and the second layer in the first direction;
- and
- forming an insulating layer on the first surface, the insulating layer including a first portion adjacent to the bottom portion and a second portion adjacent to the top portion, wherein
- a first thickness of the first portion along the first direction is greater than a second thickness of the second portion along the first direction.
Dependencies are inferred from the claim text.