Semiconductor component comprising an interlayer
AssigneeOSRAM Opto Semiconductors GmbH
InventorsTobias Meyer, Matthias Peter, Jürgen Off, Alexander Walter, Tobias Gotschke, Christian Leirer
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Abstract
An optoelectronic semiconductor component includes a layer sequence including a p-doped layer, an n-doped layer and an active zone that generates electromagnetic radiation arranged between the n-doped layer and the p-doped layer, wherein the n-doped layer includes at least GaN, an interlayer is arranged in the n-doped layer, wherein the interlayer includes AlxGa1-xN, wherein 0<x≦1, and the interlayer includes magnesium.
Claims21
1-17. (canceled)
An optoelectronic semiconductor component comprising a layer sequence comprising a p-doped layer, an n-doped layer and an active zone that generates electromagnetic radiation arranged between the n-doped layer and the p-doped layer, wherein the n-doped layer comprises at least GaN, an interlayer is arranged in the n-doped layer, the interlayer comprises AlxGa1-xN, wherein 0<x≦1 and the interlayer comprises magnesium.
An optoelectronic semiconductor component comprising a layer sequence comprising:
- a p-doped layer;
- an n-doped layer, having a first layer, a second layer and an interlayer;
- and
- an active zone that generates electromagnetic radiation arranged between the n-doped layer and the p-doped layer,
- wherein the n-doped layer comprises at least GaN,
- the first layer and the second layer are nitride-based,
- the first layer has holes, cracks and cutouts,
- the interlayer is arranged in the n-doped layer in between the first layer and the second layer,
- the interlayer comprises AlxGa1-xN, wherein 0<x≦1, and
- wherein the interlayer comprises magnesium.
Dependencies are inferred from the claim text.