Semiconductor light emitting element and manufacturing method thereof
AssigneeKabushiki Kaisha Toshiba
InventorsRei HASHIMOTO, Kei KANEKO, Satoshi MITSUGI, Chie HONGO
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Abstract
A semiconductor light emitting element includes a first layer, a second layer, an intermediate layer, and a third layer. The first layer has a first surface having roughness including concave portions of which side surfaces are inclined and a second surface on an opposite side to the first surface. The first layer includes a first conductive-type first semiconductor layer. The second layer includes a second conductive-type second semiconductor layer. The intermediate layer is provided between the second surface and the second layer. The third layer is provided in the concave portions.
Claims21
A semiconductor light emitting element, comprising:
- a first layer including at least a first semiconductor layer of a first conductivity-type, the first layer having a first surface that has roughness that includes a plurality of concave portions with sidewall surfaces that are inclined with respect to a layer plane that is parallel to a second surface of the first layer, the first and second surfaces being on opposing sides of the first layer;
- an intermediate layer adjacent to the second surface;
- a second layer including a second semiconductor layer of a second conductivity type and adjacent to the intermediate layer, the intermediate layer being between the second surface and the second layer;
- and
- a third layer on the sidewall surfaces of the concave portions, the third layer being a crystalline material having a crystal orientation that corresponds to a crystal orientation of the first layer at the sidewall surfaces, wherein a material of the first layer is different from the crystalline material.
A light emitting element, comprising:
- a laminated body extending in a layer plane and having a first side and a second side opposing the first side, the laminated body including:
- a first layer at a first surface on the first side and including a first nitride semiconductor material of a first conductivity type, the first surface having a roughness that includes a plurality of concave portions with sidewall surfaces angled with respect to the layer plane,
- a light-emitting layer adjacent to the first layer in a first direction orthogonal to the layer plane, and
- a second layer on the second side and adjacent to the light-emitting layer in the first direction, the light-emitting layer being between the first and second layer in the first direction, the second layer including a second nitride semiconductor material of a second conductivity type;
- and
- a third layer comprising crystalline material disposed on the first surface, a material of the first layer being different form the crystalline material, the third layer contacting at least portions of the sidewall surfaces, the third layer having a local crystal plane orientation that matches a crystal plane orientation of a portion of the first layer that is present at the sidewall surfaces.
A manufacturing method, comprising:
- forming a first layer including at least a first semiconductor layer of a first conductivity-type, the first layer having a first surface that has roughness that includes a plurality of concave portions with sidewall surfaces that are inclined with respect to a layer plane that is parallel to a second surface of the first layer, the first and second surfaces being on opposing sides of the first layer,
- forming an intermediate layer adjacent to the second surface;
- forming a second layer including a second semiconductor layer of a second conductivity type adjacent to the intermediate layer, the intermediate layer being disposed between the second surface and the second layer;
- and
- forming a third layer on the sidewall surfaces of the concave portions, the third layer being a crystalline material having a crystal orientation that corresponds to a crystal orientation of the first layer at the sidewall surfaces, wherein a material of the first layer is different from the crystalline material.
(canceled)
Dependencies are inferred from the claim text.