Optoelectronic gan-based component having increased esd resistance via a superlattice and method for the production thereof

An optoelectronic component comprising:

• a semiconductor layer structure having a quantum film structure;
• and
• a p-doped layer arranged above the quantum film structure,
• wherein the p-doped layer comprises at least one first partial layer and a second partial layer, and
• the second partial layer has a higher degree of doping than the first partial layer.

A method of producing an optoelectronic component comprising:

• providing a substrate;
• growing a quantum film structure;
• and
• growing a p-doped layer,
• wherein growing the p-doped layer comprises growing at least one first partial layer and a second partial layer, and
• the second partial layer has a higher degree of doping than the first partial layer.

An optoelectronic component comprising:

• a semiconductor layer structure having a quantum film structure;
• and
• a p-doped layer arranged above the quantum film structure, wherein
• the p-doped layer comprises at least one first partial layer and a second partial layer,
• the second partial layer has a higher degree of doping than the first partial layer,
• the p-doped layer comprises a plurality of first partial layers and second partial layers which alternately succeed one another,
• the p-doped layer has an indium proportion of less than 30%, and
• the p-doped layer has an aluminum proportion of less than 30%.