Group iii nitride semiconductor light-emitting device and production method therefor

A method for producing a Group III nitride semiconductor light-emitting device comprising a first conduction type first semiconductor layer, a light-emitting layer, and a second conduction type second semiconductor layer, the method comprising:

• forming a first electrode to be electrically connected to the first semiconductor layer;
• forming a second electrode to be electrically connected to the second semiconductor layer;
• and
• forming a second electrode side barrier metal layer on the second electrode;
• wherein
• the second electrode has an electrode layer containing at least one of Ag and Al;
• in the forming the first electrode and the forming the second electrode side barrier metal layer, the second electrode side barrier metal layer is formed on the second electrode while the first electrode to be electrically connected to the first semiconductor layer is formed;
• and
• the first electrode and the second electrode side barrier metal layer are deposited in the same layered structure.