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US 2016/0079465 A1Published application
Photo cell devices for phase-sensitive detection of light signals
AssigneeInfineon Technologies AG
InventorThoralf Kautzsch
Life of this patent
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Abstract
Embodiments relate to photo cell devices. In one embodiment, a trench-based photo cells provides very fast capture of photo-generated charge carriers, particularly when compared with conventional approaches, as the trenches of the photo cells create depleted regions deep within the bulk of the substrate that avoid the time-consuming diffusion of carriers.
Claims19
A method comprising:
- providing a first vertical trench in a substrate;
- and
- providing a second vertical trench in the substrate;
- and
- alternately depleting a first region of the substrate surrounding the first vertical trench and a second region of the substrate surrounding the second vertical trench by alternately applying a voltage to a first vertical trench gate contact and a second vertical trench gate contact.
2 more elements
A method comprising:
- providing a first vertical trench in a substrate;
- and
- providing a second vertical trench in the substrate;
- and
- alternately depleting a first region of the substrate surrounding the first vertical trench and a second region of the substrate surrounding the second vertical trench by alternately applying a voltage to a first vertical trench gate contact and a second vertical trench gate contact,
- wherein a depth of the first vertical trench and the second vertical trench is related to a wavelength of a signal source.
3 more elements
A method comprising:
- providing a first vertical trench in a substrate;
- and
- providing a second vertical trench in the substrate;
- and
- alternately depleting a first region of the substrate surrounding the first vertical trench and a second region of the substrate surrounding the second vertical trench by alternately applying a voltage to a first vertical trench gate contact and a second vertical trench gate contact,
- wherein a lateral distance separating the first vertical trench and the second vertical trench is related to a doping level of the substrate such that upon operation a biasing of one of the first vertical trench and the second vertical trench results in formation of a fully depleted gap between the first vertical trench and the second vertical trench.
3 more elements
Dependencies are inferred from the claim text.