Photodetector
AssigneeKabushiki Kaisha Toshiba
InventorsKeita SASAKI, Risako UENO, Hideyuki FUNAKI
Life of this patent
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Abstract
According to a photodetector includes a first light detection layer and a reflective layer. The first light detection layer has a first surface and a second surface on a side opposite to the first surface. The first light detection layer includes a first light detection area including a p-n junction of a p-type semiconductor layer containing Si and an n-type semiconductor layer containing Si. The reflective layer arranged on a second surface side of the first light detection layer so as to be opposed to the first light detection area. The reflective layer reflects at least part of light in a near-infrared range.
Claims10
A photodetector comprising:
- a first light detection layer having a first surface and a second surface on a side opposite to the first surface, and including a first light detection area including a p-n junction of a p-type semiconductor layer containing Si and an n-type semiconductor layer containing Si;
- and
- a reflective layer arranged on a second surface side of the first light detection layer so as to be opposed to the first light detection area, the reflective layer reflecting at least part of light in a near-infrared range.
Dependencies are inferred from the claim text.